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segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500a
如何測試 CMOS 閘極介電層的可靠性
利用時間零點介電擊穿（TZDB）、時間依賴性介電擊穿（TZDB）、V-Ramp 及 J-Ramp 測量方法，來表徵 CMOS 閘極介電層的可靠性，並據此評估其介電擊穿行為。
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