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Explore dual-channel and ultra-wideband signal analysis for demanding RF workflows.
Get faster, clearer insights with our new multicore, 12-bit oscilloscope up to 33 GHz. Trade in your old oscilloscope and get credit toward a new XR8.
Bridging design and physical testing to evaluate drop, impact, shock, and vibration compliance before hardware exists.
Unlock your free upgrade to the next bandwidth tier.
Strengthen 1.6T network reliability for AI-scale workloads from transceivers to interconnects.
Pair Keysight VSA software with the new XA5 signal analyzer for advanced visualization, demodulation, and analysis — start your 30-day trial today.
With extra memory and storage, these enhanced NPBs run Keysight's AI security and performance monitoring software and AI stack.
Explore end-to-end workflows spanning IC design, validation, wafer test, and photonics.
Explore curated support plans, prioritized to keep you innovating at speed.
Maximize accuracy and performance with precision accessories engineered for Keysight instruments.
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Use Cases mapped to every stage of your product lifecycle, from design through operations.
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Authoritative application notes, data sheets, reference designs, and test procedures to accelerate design and validation decisions.
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Explore methodologies, test strategies, and technical resources for designing, validating, and scaling AI systems and networks.
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W8608EP 模型建構軟體(MBP)UTSOI 模型產生要件是適用於 Leti-UTSOI 的自動基頻模型萃取軟體套件。此萃取軟體套件具備下列特性:
Leti-UTSOI 輕巧模型由 CEA-Leti 所開發,可用於描述 FDSOI 電晶體的電氣特性,並將其所有的特異性都考慮在內。該模型根據對元件的實體描述,其所有參數皆以實體為基礎,因而可用於對處理過程進行預測性分析。模型中考慮到了薄矽膜前後介面之間的靜電耦合,因此可準確呈現採用低摻雜薄矽膜技術的元件特性,包括絕緣層厚度從幾奈米到幾百微米的元件。 在最新版本(2.x)中,Leti-UTSOI 輕巧模型加入了在矽膜背面建立反轉層的完整描述。這個實體描述是透過求解電晶體中主導靜電的方程式,並根據其未經簡化的原始解而獲得的。Leti-UTSOI 模型是第一個,也是目前唯一具有此功能的輕巧模型,因此能夠描述在電晶體前後介面上應用大範圍極化時的電晶體特性。2019 年 4 月,UTSOI2 已進入 FDSOI technology 輕巧模型聯盟(CMC)標準化過程的第二階段。 回到 Model Builder Program (MBP) 頁面。