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SiC MOSFET Vth Measurement for JEP183

SiC MOSFET Vth Measurement for JEP183

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This application note introduces the threshold voltage (Vth) evaluation methods for SiC power MOSFETs based on the JEDEC publication - JEP183 and its related Keysight solutions.

Keysight offers two solutions for the Vth measurement on the SiC MOSFET that JEP183 describes.

 

• The B1505A (B1506A) with the JEP183 dedicated Application Tests implemented in the EasyEXPERT group+ software allows easy and accurate SiC Vth evaluation. In addition, the UltraHigh Current Unit (UHCU) and the High Voltage SMU (HVSMU) enhance the measurements in combination with the High-Voltage (HV) and the High-Current (HC) stress.

 

• The B2900B series SMU with the PathWave IV Curve Measurement Software allows faster measurements beyond the JEP183 requirements at a lower cost. However, some restrictions exist, such as no SiC Vth dedicated GUI nor Vth extraction capability and limited I/V range.

 

You can select the appropriate solution considering the conditions such as simplicity, scalability, cost, etc.

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