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Keysight B1500A Semiconductor Device Analyzer
Recent advances in nanoprobers, which enable the probing of extremely small line widths, permit the electrical characterization of individual devices within an integrated circuit. This application note describes how to use the Keysight Technologies, Inc. B1500A Semiconductor Device Analyzer to make these types of electrical measurements, using SRAM failure analysis to illustrate this technique.
In conventional memory failure analysis, the failed bit is detected by a logic tester and then a Scanning Electron Microscope (SEM) and a Transmission Electron Microscope (TEM) are used to physically observe and determine the root cause of the failure.
However, the SEM and TEM are both destructive tests, and they only allow you to look at one point among several possible failure locations. This greatly restricts the user’s ability to locate the specific cause of a failure. In addition, it is difficult to apply conventional physical observation techniques to electrical failures caused by very small residues or abnormal dopant densities, which also reinforces the need to perform some sort of electrical testing.
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