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應用說明
Introduction
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are gaining rapid adoption in high-power, high-voltage, and high-frequency applications due to their superior performance such as high saturation velocity, high breakdown voltage, and high sheet carrier density.
However, integrating GaN devices into a circuit design requires accurate and robust circuit simulations. The accuracy of simulations heavily depends on the compact model's ability to predict highly non-linear behavior, including thermal and dynamic memory effects.
The ASM-HEMT model is a physics-based model promoted as an industry-standard model for GaN HEMTs by the Compact Modeling Coalition (CMC). In this document, we will delve into the extraction of the ASM-HEMT core model parameters and temperature scaling. The modeling of trapping effects in GaN HEMTs will be discussed in another application note.
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