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應用說明
In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another. As components have scaled and transistors have gotten closer and closermtogether, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. It is this reduction in scale which drives the need for insulating materials with lower dielectric constant. A ‘low-k’ material is one with a small value for dielectric constant relative to silicon dioxide (SiO2)—a former dielectric of choice. The dielectric constant of SiO2 is 3.9. This number is the ratio of the permittivity of SiO2 divided by permittivity of vacuum, eSiO2/∈0,where ∈0 = 8.854 x 10-6 pFμm. There are many materials with lower dielectric constants, but few of them can be suitably integrated into a semiconductor manufacturing process[1].
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