PathWave Device Modeling 2020 Update 1.0 incorporates the new Compact Model Coalition (CMC) physics-based RF GaN models; ASM-MEMT and MVSG. Both 5G and Radar applications are putting extreme demands on modern RF GaN devices. Often the older empirical models are simply not sufficiently accurate to predict the extreme power and large-signal behavior exhibited by these devices. The two new CMC models rely on the underlying semiconductor physics to allow the models to accurately predict performance well outside the characterization region. With the addition of these two models into our Device Modeling portfolio, Keysight now offers a complete set of empirical, AI-based and physics-based RF GaN models. Customers now have the option to pick and choose whichever model best fits their application and workflow.

What's driving changes in Device Modeling for 2020?

• The increase demand of 5G and A/D applications are driving the industry toward GaN technologies due to their superior power, size and efficiency advantages.
• The 2020 release of Pathwave Device Modeling targets RF Modeling engineers developing models for 5G and Radar applications
• This release solidifies our position as the premier RF Model Extraction provider by completing our suite of RF GaN models (Empirical, Physics-based and ANN)

Figure 1. RF GaN with PathWave Device Modeling.

New Features in PathWave Device Modeling 2020 Update 1.0

New CMC GaN RF Bundle and Add-on

• W8524BP IC-CAP CMC GaN RF Modeling Bundle Add-on includes the new CMC Physics-based models (ASM-HEMT and MVSG_CMC)
• W8525BP IC-CAP CMC GaN RF Modeling Bundle includes the W8500BP Modeling Suite Bundle and the W8524BP GaN RF Add-on ​

IC-CAP provides new extraction flows for 2 physics-based models for GaN device modeling, the ASM-HEMT model jointly developed by UC Berkeley and ITT Kanpur and the MVSG model developed by MIT. Both models were accepted as industry standard by the Compact Model Coalition (CMC).

As physics-based models, they may lend insight to GaN process developers. For example, process engineers may learn the benefits of increased mobility or reduced contact resistance on overall power amplifier efficiency. Both models account for electro-thermal and carrier trapping effects, as well as other important effects that strongly influence non-linear RF behavior, such access regions, velocity saturation, field-plates, and drain-induced barrier lowering (DIBL).

The RF GaN toolkit introduced in PathWave Device Modeling 2020 serves as an excellent starting point for the extraction of ASM-HEMT and MVSG model parameters with an easy-to-use user interface. Now, in a single platform, one can initiate measurements, bring the data into the IC-CAP platform, extract model parameters and then export the resultant model card to Advanced Design Systems (ADS) or any other simulator that can run these models. Two example flows are presented: one for the MVSG and one for the ASM-HEMT.

Updated BSIMBULK and BSIMCMG RF Extraction Packages

Update of BSIMCMG-RF to Model Package and replacement of BSIM6-RF with BSIMBULK-RF Model Package. Model Package version 2.3 updates include:

• UI Updates
• Bug fixes and increase of stability
• New ADS circuit models
• Update of HSPICE circuit models
• Update of Model Package Documentation
• New feature allowing loading of complete Folder with MDM files
• MDM file import customization options, warning and error handlers added
• Model file | parameter manual and auto tuner | optimizer triggered saving feature added
• Scaling Method feature improved
• Optimizers added for parameter extraction

Figure 2. BSIM-CMG RF modeling with PathWave Device Modeling.

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