Distortion: SHI >100 dBm Typ; THI +43 dBm Typ; TOI +43 dBm Typ.
The 1GG5-8205 is a 13.5 GHz GaAs integrated diode limiter that can be used to protect sensitive RF circuits from excess RF power, DC transients, and ESD.
The circuit contains Planar–Doped–Barrier (PDB) diodes with integrated matching networks and is fabricated with the MB6A integrated diode process. The barrier height of each diode element and the number of diode elements in each "stack" are optimized for low distortion when Pin <15 dBm, while limiting transmitted power when Pin >25 dBm.
All HMMC parts are manufactured in Santa Rosa, California using Keysight´s reliable instrument grade GaAs process.