W8524BP IC-CAP CMC GaN RF Modeling Bundle Add-on

The W8524BP IC-CAP CMC GaN RF Modeling Bundle Add-on provides extraction flows for 2 physics-based models for GaN device modeling. Both models were recently accepted as industry standard by the Compact Model Coalition (CMC) in 2017.

• Advanced Spice Model for High Electron Mobility Transistors or ASM-HEMT Model
• MIT Virtual Source GaN Model or MVSG_CMC Model

Both models have been formulated for both high-frequency (RF) and high-voltage (power electronics) applications. As physics-based models, they may lend insight to GaN process developers. For example, process engineers may learn the benefits of increased mobility or reduced contact resistance on overall power amplifier efficiency. Thus, a connection is made between circuit and system performance and foundry process improvements via physics-based device modeling parameters.

The RF GaN toolkit introduced in PathWave Device Modeling (IC-CAP) 2020 serves as an excellent starting point for the extraction of ASM-HEMT and MVSG model parameters with an easy-to-use user interface. Now, in a single platform, one can initiate measurements, bring the data into the IC-CAP platform, extract model parameters and then export the resultant model card to Advanced Design Systems (ADS) or any other simulator that can run these models. Two example flows are presented: one for the MVSG and one for the ASM-HEMT.

Finding the right combination of parameters so that the model data matches the measured data continues to be an art. Even more challenging is deriving an extraction methodology or series of parameter tuning steps. The development of a new extraction flow on a new model can take 6 months or more. The modeling engineer needs to explore and isolate the effects of each parameter, identifying the best data to fit. Often, he/she will realize that a wrong turn early in the model parameter extraction process may lead to a dead-end in terms of fitting accuracy. With the RF GaN toolkit presented in IC-CAP, the extraction recipes can be leveraged as a great starting point, and a modeling engineer is empowered and encouraged to get started quickly using these models.

As shown in Figure 1 below, a powerful UI helps get the modeling engineer focused on the extraction flow, without having to worry about parameter bookkeeping, data plotting, etc.

Figure 1. DC-CV-Spar-Modeling final fit.

Groups of parameters are selectable to focus the modeling engineer on the topic of choice, and the parameter selection may be further refined from a list. Similarly, plots are selected to expose the effect of each parameter. Along the top, one can choose to optimize or tune the selected parameters based.

Product Bundles

The W8524BP IC-CAP CMC GaN RF Modeling Bundle Add-on requires the following products:

• W8501EP IC-CAP Core Environment
• W8502EP IC-CAP Simulation and Analysis

Alternatively, the W8525BP IC-CAP CMC GaN Modeling Bundle includes the following products to get you going:

• W8524BP IC-CAP CMC GaN RF Modeling Bundle Add-on
• W8500BP IC-CAP Device Modeling Platform Bundle

For more information on the products listed above, select the Options & Accessories tab above.