Más información
segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1505a
Cómo medir la tensión de ruptura de un transistor bipolar de puerta aislada
Mide la tensión de ruptura y la corriente de fuga de los IGBT en rangos de funcionamiento de alta tensión, con una capacidad de caracterización de hasta 10 kV.
Más información