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Laser sources are the core of optical fault injection, providing the energy used to induce controlled faults within semiconductor devices. By selecting the appropriate wavelength, power level, pulse characteristics, and spot size, security engineers can target specific device technologies, attack surfaces, and evaluation objectives. Different laser technologies offer unique advantages, from rapid chip-wide scanning and vulnerability discovery to highly localized fault injection and advanced root-cause investigation.
Enable a wide range of fault injection methodologies, from vulnerability research and countermeasure validation to certification-focused testing.
DS1112A
The DS1112A is a 1064 nm wavelength near infrared (NIR) multimode diode laser for fault injection, with a high power rating and configurable pulse length.
The DS1112A 1064 nm Multimode Fault Injection Laser uses multimode laser diodes with a high power rating, enabling coarse chip surface scanning with large spot size and sufficient intensity within spot.
DS1113A
The DS1113A 532 nm Diode Pumped Solid State Fault Injection Laser is a green laser offering fast and reliable triggering.
The DS1113A 532 nm Diode Pumped Solid State Fault Injection Laser complements diode lasers and boasts better fault injection features compared to laser cutter systems.
DS1115A
The DS1115A single-mode laser provides a small spot size and maximum timing control. Use this 980 nm model for thinner substrates.
This single-mode laser is the best solution for a small spot size (down to 1 µm). Diode lasers provide maximum timing control, and fibers allow maximum flexibility in your laser fault injection setup. Model DS1115A (980 nm) is ideal for devices with thinner substrates such as smart card chips.
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A laser source generates the optical energy used to induce controlled faults within a semiconductor device. It determines key attack characteristics, including wavelength, power, spot size, pulse duration, and timing precision, all of which influence the effectiveness of a fault injection evaluation.
Different semiconductor technologies, package types, and evaluation objectives require different laser characteristics. Some laser sources are optimized for rapid vulnerability discovery across an entire chip, while others provide the precision needed to target specific circuit regions.
The optimal laser source depends on several factors, including:
The Keysight Device Security team can help identify the most appropriate wavelength and laser technology for your target device.
Wavelength affects how laser energy interacts with semiconductor materials and how deeply it penetrates the device. Shorter wavelengths are typically absorbed closer to the surface, making them well suited for front-side attacks. Longer, near-infrared wavelengths can penetrate deeper into silicon, enabling back-side attack methodologies.
Selecting the appropriate wavelength for your access point and package type directly impacts targeting accuracy, fault effectiveness, and overall evaluation success.
Front-side attacks target the top surface of the semiconductor die, where the metal interconnect layers and circuitry are located.
Back-side attacks target the device through the silicon substrate from underneath the die. This approach is often preferred when front-side metal layers obstruct access to security-critical circuitry or when package constraints make front-side access difficult.
The appropriate approach depends on the semiconductor technology, package construction, and evaluation objectives.
Multimode lasers typically produce larger spot sizes and higher optical power, making them well suited for rapid scanning, fault discovery, and broad chip characterization.
Single-mode lasers generate much smaller and more focused spots, enabling highly localized fault injection and detailed investigation of individual circuit regions.
DPSS (Diode-Pumped Solid-State) lasers generate pulses with high peak power and stable pulse characteristics. They are commonly used for advanced fault injection campaigns that require consistent energy delivery and highly repeatable results, particularly when stronger pulse energy is required.
Spot size determines the area of the device being targeted by the laser.
A larger spot can simplify vulnerability discovery and broad characterization by affecting a wider area of the chip. A smaller spot enables highly localized fault injection and more precise targeting of individual circuit elements.
Many evaluations begin with a larger spot size to identify sensitive regions and then transition to a smaller spot size to isolate the exact circuitry responsible for the observed behavior.
Successful fault injection often depends on disturbing a device at a very specific moment, such as during a particular clock cycle or security check.
Laser sources with short pulse widths, low timing jitter, and precise trigger-to-laser delays enable engineers to control exactly when a fault occurs. This improves attack repeatability, helps reproduce successful fault conditions, and increases confidence in the evaluation results.
The ideal laser source depends on your target technology, evaluation goals, and required level of precision.
Some users prioritize broad fault discovery, while others require highly localized analysis from the beginning. A common approach is to start with a higher-power source and larger spot size to identify sensitive regions, then move to a more focused laser source for detailed investigation and root-cause analysis.
The Keysight Device Security team can help recommend the most suitable laser source and system configuration for your evaluation.
Yes. Fault injection lasers can operate at power levels that require appropriate laser safety procedures and equipment.
Keysight offers dedicated safety solutions designed to work alongside its laser fault injection systems. The Keysight Device Security team can advise on the appropriate safety configuration for your laboratory environment and evaluation setup.