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Application Notes
Reducing the time required to characterize the reliability of new process technologies continues to become more and more important. The use of new materials such as high-k gate dielectrics coupled with the push for ever-smaller device geometries make achieving this goal more difficult, since they present new reliability challenges that did not exist a few years ago. In particular, negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) induced threshold voltage (Vth) degradation in MOSFETs under high gate bias and high temperature is an area of critical concern for advanced semiconductor processes. Many NBTI studies have shown that measured Vth degradation is strongly dependent upon how the test is performed (such as the type of stress applied to the gate or the elapsed time between removal of the stress and the Vth measurement). This makes it important for any NBTI measurement hardware to be able generate various types of AC stress (in addition to DC stress) and for it to be able to make measurements within 1 μs after removal of the stress (to avoid dynamic recovery effects).
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