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segmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/bofu,keysight:product-lines/1h,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/design-and-test-product/power-analyzer,keysight:models/b2/b2912csegmentation:business-unit/EISG,segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:funnel/b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Come valutare le prestazioni dei transistor BJT utilizzando SMU di precisione
Valutare le prestazioni dei transistor a giunzione bipolare utilizzando unità di misura della sorgente (Source Measure Units) di precisione per l'erogazione sincronizzata di tensione e la misurazione della corrente. Analizzare le risposte della corrente di base e di collettore in condizioni di polarizzazione controllate per valutare le caratteristiche elettriche dei transistor.
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