How to Characterize SiC MOSFET Gate Charge

+ Power Device Analyzer / Curve Tracer

Measure SiC Gate Charge Accurately

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) gate-charge characterization requires controlled gate excitation while measuring gate voltage, gate current, drain voltage, and drain current under defined operating conditions. Static testing separates high-voltage and high-current measurements and combines the resulting curves, while dynamic testing integrates measured gate current during switching to derive gate charge.

Dynamic testing uses a double-pulse test circuit and derives the gate-charge-versus-time curve by integrating gate current before transforming it with the gate-source-voltage waveform into a Qg-Vgs characteristic. Measurement settings such as gate resistance, switching time, inductive load, gate voltage, drain voltage, and drain current must be configured to control oscillation and support reliable parameter extraction.

SiC MOSFET Gate Charge Measurement Solution

Gate-charge (Qg) characterization requires controlling the device's voltage and current operating conditions while measuring the gate-current and gate-voltage behavior throughout switching. Static testing with the Keysight B1506A Power Device Analyzer / Curve Tracer performs separate high-voltage and high-current Qg measurements and fits the results into a complete gate-charge curve. Dynamic testing with the Keysight PD1550A Double-Pulse Tester uses a double-pulse test approach, integrating gate current to derive Qg and correlating it with gate-source voltage.

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PD1550A Advanced Dynamic Power Device Analyzer / Double-Pulse Tester

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B1506A Power Device Analyzer / Curve Tracer for Circuit Design

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