Brittle-to-Ductile Transition Behavior Study of Silicon
Publication Number: 5992-2518EN
Publication Date: 2017.10.26
Language: English
Application Notes

Brittle-to-Ductile Transition Behavior Study of Silicon

Show Description

Single crystal silicon (SC-Si) has been extensively used in semiconductor industry to make micro/ nano electronic devices. The brittle-ductile transition (BDT) of single crystal silicon (SC-Si) is of great practical importance in the development and manufacture of these devices as they require many thermomechanical processing steps. Understanding the material behavior, i.e. deformation mechanisms and phase transformation, improves control and enables prediction of Si failure during thermomechanical processing. One of the thermomechanical properties of many materials is that they are brittle at low temperatures, but become ductile at higher temperatures. This transition occurs over a narrow range of temperature for Si, referred to as brittle-to-ductile transition temperature (TBD).