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Gallium nitride (GaN) is gaining importance due to its ability to provide significantly improved performance with reduced energy and physical space compared to conventional silicon technologies. In some applications where silicon has reached its limits, GaN becomes essential, while in others, its efficiency, switching speed, size, and high-temperature operation make it increasingly attractive.
Trapping effects modeling is a complex and interdisciplinary field that involves solid-state physics, numerical methods, materials science, and electronics. Accurate modeling of trapping effects is essential for optimizing semiconductor device performance, reliability, and functionality. The CMC standard compact models for GaN high electron mobility transistors (HEMTs), such as ASM-HEMT [1] and MVSG_CMC [2], consider the effects of trapping.
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