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Introduction
This application note introduces the bias-temperature-stress (BTS) test methods for SiC power MOSFETs based on the JEDEC publication - JEP184 and its related Keysight solutions.
SiC power MOSFETs are attracting attention as Si-based replacements because it shows great success in high-performance applications such as electric vehicles. The SiC MOSFET is reported to behave differently than the Si-based MOSFET in the BTS test. The threshold-voltage (Vth) instability characteristics are closely related to the BTS test. Therefore, it is vital to accurately evaluate the Vth instability characteristics (BTI: Bias Temperature Instability) of SiC power MOSFETs with appropriate measurement methods to secure long-term reliability.
Keysight offers solutions for the BTI-Vth measurement on the SiC MOSFET that JEP184 describes. The B1505A (B1506A) with the JEP184 dedicated Application Tests implemented in the EasyEXPERT group+ software allows easy and accurate SiC BTI-Vth evaluation. In addition, the Ultra-High Current Unit (UHCU) and the High Voltage SMU (HVSMU) enhance the measurements in combination with the HighVoltage (HV) and the High-Current (HC) stress.
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