How to Characterize Insulated Gate Bipolar Transistors

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Characterize High-Power Insulated Gate Bipolar Transistors DC Performance

Insulated gate bipolar transistor (IGBT) characterization requires controlled voltage and current sourcing across the collector, gate, and emitter while measuring device response over a wide operating range. The test setup must support dc and pulsed measurements, plus high-voltage and high-current sweeps for output characteristics, transfer characteristics, saturation voltage, leakage current, and breakdown behavior. Capacitance-versus-voltage measurements may also be included when the device specification requires them.

The measurement process applies controlled sweeps or constant-bias conditions to the device under test and records the corresponding current-voltage response. Output characteristics are measured while stepping gate voltage, transfer characteristics require varying gate voltage at a controlled collector voltage, and breakdown testing extends the collector voltage while monitoring leakage current. Compliance settings define voltage, current, and power limits, while oscilloscope-style waveform viewing helps verify pulsed measurement conditions and avoid self-heating effects.

High-Power Insulated Gate Bipolar Transistors Characterization Solution

High-power Insulated gate bipolar transistor (IGBT) characterization requires sourcing and measuring across both high-current and high-voltage operating regions while controlling compliance and device self-heating. The Power Device Analyzer/Curve Tracer combines multiple measurement capabilities for IGBT dc and capacitance characterization. An Ultra High Current Unit (UHCU) extends pulsed current measurements to 1500 A, while an Ultra High Voltage Unit (UHVU) supports breakdown measurements to 10 kV. The system also supports capacitance-voltage measurements with up to 3 kV dc bias. EasyEXPERT Group+ provides Tracer Test, Application Test, Classic Test, and Quick Test modes for interactive measurements, parameter extraction, analysis, and automated test sequences.

See Block Diagram of High-Power IGBT Characterization Solution

See Block Diagram of High-Power IGBT Characterization Solution

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