How to Measure SiC MOSFET Threshold Voltage

+ Parameter Analyzer

Minimize Hysteresis with JEP183-Compliant Measurement Sequencing

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) threshold voltage measurements require carefully controlled timing to minimize the effects of threshold voltage hysteresis. The JEDEC JEP183 guideline defines a conditioning pulse followed by a controlled measurement sequence that stabilizes device behavior before threshold voltage extraction. The measurement requires programmable voltage sourcing, current measurement, and precise timing between the conditioning pulse and gate voltage sweep.

The measurement sequence applies a gate conditioning pulse before performing one of several threshold voltage (Vth) measurement methods defined by JEP183, including fixed drain voltage sweeps, synchronized gate and drain sweeps, or drain-gate short configurations. The threshold voltage is extracted at a specified drain current while maintaining the recommended timing requirements to produce stable and repeatable characterization results.

JEP183 SiC Vth Measurement Solution

JEP183-compliant threshold voltage characterization requires a measurement system capable of generating programmable conditioning pulses, controlling synchronized voltage sweeps, and accurately extracting threshold voltage from measured current-voltage data. The Keysight Semiconductor Device Analyzers integrate these capabilities with EasyEXPERT group+ software, providing ready-to-use JEP183 application tests that automate the complete measurement workflow. Engineers can select from multiple built-in Vth measurement methods, automatically configure measurement timing, perform threshold voltage extraction at a specified drain current, and save measurement conditions and results within the EasyEXPERT workspace for efficient analysis and repeatable device characterization.

Get Quote