How to Improve CMOS Reliability Testing

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Parameter Analyzer
+ Parameter Analyzer
Parameter Analyzer
+ Parameter Analyzer

Improve CMOS Reliability Characterization

Advanced Complementary Metal Oxide Semiconductor (CMOS) technologies continue to scale to smaller device geometries, increasing electric field strength and current density that can reduce device lifetime. Engineers must evaluate gate dielectric integrity, hot carrier effects (HCI), bias temperature instability (BTI), and electromigration (EM) to ensure long-term reliability.

CMOS reliability evaluation requires multiple stress and measurement techniques, including dielectric breakdown testing, stress-measure-stress characterization, capacitance measurement, and interconnect reliability testing. Achieving accurate lifetime estimation depends on minimizing stress interruption, supporting both DC and AC stress conditions, and simplifying complex reliability test workflows.

Comprehensive CMOS Reliability Test Solution

Evaluating CMOS reliability requires a measurement solution capable of performing multiple reliability tests while minimizing setup complexity and improving measurement accuracy. The Keysight B1500A Semiconductor Device Parameter Analyzer addresses these requirements by combining precision source/monitor units (SMUs), ultra-fast waveform generation, capacitance measurement, and ready-to-use reliability test libraries on a single modular platform. Its flexible architecture supports gate dielectric integrity, HCI, BTI, and electromigration testing, while EasyEXPERT software simplifies test setup with built-in application libraries and automated analysis. Together, these capabilities help engineers streamline reliability characterization, improve measurement repeatability, and accurately estimate device lifetime.
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See Block Diagram of CMOS Reliability Test Solution

B1500A Semiconductor Device Parameter Analyzer

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