How to Characterize GaN Switching Performance

+ Dynamic Power Device Analyzer / Double-Pulse Tester

Characterize Fast GaN Switching Behavior

Double-pulse testing of gallium nitride (GaN) power devices requires control of the power loop, gate loop, and direct current (DC)-link loop parasitics while capturing the fast voltage and current transitions generated during switching. The measurement setup combines an inductive switching circuit, gate drive, load inductance, voltage and current measurements, and device-under-test connections with sufficiently low parasitics and measurement bandwidth for GaN switching waveforms.

During the test, two gate pulses establish the required current and capture the device's turn-on and turn-off behavior. Voltage, current, and gate waveforms can then be used to characterize switching behavior and related dynamic parameters. GaN characterization can also include dynamic drain-to-source on-resistance (Rds(on)), where a fast clamp circuit enables measurement of the low on-state drain voltage after the switching transition.

GaN Double-Pulse Characterization Solution

GaN double-pulse testing requires a low-parasitic switching circuit together with high-bandwidth voltage and current measurements capable of capturing fast switching transitions. The Keysight Dynamic Power Device Analyzer / Double-Pulse Tester combines its instrumentation, probes, safety system, automated control software, autocalibration routines, and fixture with customized GaN test boards. The boards integrate direct current (DC)-link and decoupling capacitors, custom gate drivers, probe connections, calibration constants, and a clamp circuit for dynamic drain-to-source on-resistance (Rds(on)) measurements. Keysight's Repeatable and Reliable GaN Characterization (R2GC) technologies also address current sensing, device connection, and replaceable gate resistors.

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