How to Measure SiC MOSFET Vth

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Power Device Analyzer
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Power Device Analyzer
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Stable SiC Vth Characterization

Silicon Carbide (SiC) power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) threshold voltage measurement is more difficult than conventional silicon-based FET characterization because hysteresis causes Vth to shift with prior gate bias conditions. The application note shows that even when the measurement circuit is unchanged, different conditioning pulses can produce different extracted threshold voltages, making repeatable device evaluation difficult.

To address this, JEP183 recommends applying a positive conditioning pulse before measurement so trapped charge remains in a controlled state during Vth extraction. Keysight solutions based on the B1505A/B1506A with EasyEXPERT group+ and the B2902C source measure source with PathWave IV Curve Measurement Software help engineers implement these workflows for more stable, accurate, and application ready SiC MOSFET characterization.

SiC MOSFET Vth Measurement Solution

Characterizing SiC MOSFET threshold voltage requires controlled measurement techniques to minimize hysteresis effects and ensure stable, repeatable results. Keysight supports JEP183-based threshold voltage (Vth) characterization using ready-to-run application tests on the B1505A/B1506A Power Device Analyzer / Curve Tracer , as well as high-speed waveform-driven measurements with B2902C Expert Benchtop Source Measure Units and PW9251A PathWave IV Curve Measurement Software  These approaches enable engineers to reduce variability, extract consistent Vth values, and optimize measurement workflows. Together, they provide flexibility to balance ease of use, test speed, and system integration requirements for advanced device characterization.
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