En savoir plus
segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/industry/semiconductor,keysight:models/b1/b1500a
Comment tester la fiabilité du diélectrique de grille des circuits intégrés CMOS
Caractériser la fiabilité du diélectrique de grille CMOS à l'aide de mesures de claquage diélectrique instantané (TZDB), de claquage diélectrique en fonction du temps (TZDB), de V-Ramp et de J-Ramp afin d'évaluer le comportement en cas de claquage diélectrique.
En savoir plus