How to Measure Insulated Gate Bipolar Transistor Breakdown Voltage

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Measure High-Voltage IGBT Breakdown Characteristics

Insulated gate bipolar transistor (IGBT) breakdown characterization requires applying a controlled collector-emitter voltage while measuring the resulting collector leakage current. The measurement setup must provide sufficient high-voltage sourcing capability while resolving low leakage currents before breakdown. Voltage compliance is configured according to the device's maximum collector voltage specification, so the voltage sweep remains within the intended measurement conditions.

The measurement process sweeps the collector voltage while monitoring current through the device under test. Leakage current remains relatively low before increasing as the device approaches breakdown, allowing the breakdown region to be identified from the measured current-voltage characteristic. Measurements extending into kilovolt operating regions require an appropriate high-voltage source and measurement path capable of simultaneously applying voltage and monitoring device current.

High-Voltage IGBT Breakdown Test Solution

Insulated gate bipolar transistor (IGBT breakdown testing requires sweeping collector-emitter voltage while monitoring leakage current and maintaining appropriate voltage compliance. The Keysight Power Device Analyzer/Curve Tracer supports high-voltage characterization using its Ultra High Voltage Unit (UHVU), which extends breakdown measurements to 10 kV. The application note demonstrates a 10 kV breakdown test in which the measured device reaches breakdown at approximately 8 kV. The Keysight Power Device Analyzer / Curve Tracer provides interactive measurement and analysis through EasyEXPERT Group+, allowing engineers to configure test conditions, display current-voltage characteristics, and evaluate device behavior across the high-voltage operating region.

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