How to Characterize Wide Bandgap Power Devices

+ Power Device Analyzer / Curve Tracer

Measure Wide Bandgap Devices Accurately

Wide-bandgap power devices require accurate current-voltage (IV), capacitance-voltage (CV), gate-charge, and breakdown measurements over a wide operating range. Reliable results depend on stable test conditions, proper instrument calibration, reduced oscillation, and well-planned measurement sequences. These factors are especially important for silicon carbide (SiC) and gallium nitride (GaN) devices because of their fast switching speeds and high breakdown voltages.

The measurement process combines appropriate environmental conditions, instrument self-test and self-calibration, optimized pulse timing, and controlled measurement modes to improve repeatability and reliability. Proper current compliance, pulsed measurement techniques, and optimized test sequencing help reduce oscillation, prevent hardware protection events, and produce consistent electrical characterization results for modern power semiconductor devices.

Wide Bandgap Power Device Characterization Solution

Accurate characterization of wide bandgap power devices requires an instrument capable of measuring multiple electrical parameters while maintaining stable operating conditions throughout the test sequence. The Keysight Power Device Analyzer / Curve Tracer integrates IV, CV, and gate charge characterization into a single platform while providing measurement modes designed for high-voltage and high-current semiconductor devices. Easy Test Navigator and EasyEXPERT group+ software simplify measurement configuration, instrument self-test, self-calibration, and automated data collection. Built-in measurement controls, configurable pulse timing, selectable trace modes, and measurement protection features help reduce oscillation, improve measurement repeatability, and protect both the device under test and the measurement system during demanding power semiconductor characterization.

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