How to Test Wide-Bandgap Semiconductor Power Modules

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Power Device Analyzer
+ Power Device Analyzer
Power Device Analyzer
+ Power Device Analyzer

Characterizing WBG semiconductor power modules using true pulse-isolated probe technology

Testing a power module in a double-pulse test (DPT) system requires measuring low-side and high-side signals. Silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap (WBG) power modules have higher power density than discrete power devices, incorporating multiple field-effect transistor (FET) chips to increase current. High speed charging requires the use of high current, high voltage semiconductors operating at up to 400 A, such as SiC and GaN. The unique half-bridge power module configuration of these semiconductors requires independently measuring the voltage potential at the junction between the high-side device source and the low-side device drain, which dynamically changes with large voltage swings as the half-bridge switches. This makes measuring the high-side FET challenging, especially for small gate voltages.

The DPT technique is the industry standard for determining power semiconductor performance parameters. Test engineers need a double-pulse tester that uses pulse-isolated probe technology to gather accurate gate voltage. The system relies on high-bandwidth RF compensation to provide accurate high-current measurement. The DPT system should include standard advanced measurement techniques such as probe compensation, offset adjustment, de-skewing, and common mode noise rejection. Also needed is a semi-automated calibration routine to correct system gain and offset errors. The system should conform to the latest JEDEC guidelines for standardized WBG device characterization.

WBG semiconductor power module tester

Testing WBG semiconductor power modules operating at high currents and bandwidths requires pulse-isolated probe technology to meet JEDEC JC-70 WBG standards for GaN and SiC. The Keysight WBG device analyzer and tester (model PD1550A) delivers repeatable, reliable measurements of SiC semiconductor power modules. It solves high-side gate voltage characterization challenges with innovative pulse-isolated probe technology. It tests power modules up to 1,360 V and 1,000 A, with a time-saving solderless contact technology for connecting modules under test.
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