Supports MOSRA and TMI aging model generation and optimization
Built-in extraction flows for MOSRA level 1 and level 3
Supports the simulation and extraction of user-defined reliability model
The W8614EP Model Builder Program (MBP) Reliability Module MOSRA - TMI includes the extraction packages for MOS Reliability Analysis (MOSRA) and the TSMC Model Interface (TMI) aging models.
The MBP Reliability Module offers an extraction environment for HSPICE’s built-in MOSRA models, which can simulate the aging effects including Hot Carrier Injection (HCI) and Bias Temperature Instability (BTI). Therefore, the user can evaluate the degradation of device performance over time and under the actual working conditions.
The built-in MOSRA models include two levels: level 1 and level 3. Refer to the table below for the difference between these two level versions.
BTI (with recovery) effect
Number of model parameters
Full set of I-V curves
Vth and Ids vs. time
Elaborate and requires expertise
The extraction package for the MOSRA level 3 is newly added in the MBP 2019 release. The script-based flow is fully automatic and customizable, as shown as below:
Besides MOSRA, the MBP Reliability Module also supports the TMI aging model generation. TMI is a C-based modeling API developed to support extensions of standard compact models. The user can measure the device performance degradation over time and evaluate the stress effects for the process down to 40nm and beyond.