How to Characterize Avalanche Photodiode Dark Current

Femto / Picoammeters and Electrometers
+ Femto / Picoammeters and Electrometers

Measure Avalanche Photodiode Dark Current

Avalanche photodiode (APD) dark-current characterization requires reverse-bias voltage to be applied while the device current is measured with sufficient sensitivity. The device is tested without incident light, and the measurement setup must accommodate the reverse-bias range required by the APD. For high-voltage devices, the source must support the required reverse-bias level while the ammeter resolves the low leakage current.

The measurement is performed by connecting the APD to the voltage source and ammeter, sweeping the reverse-bias voltage, and recording current at each point. The source example uses graphical measurement results to examine the current-voltage behavior, with a pronounced current increase near the high-bias region. Measurement delay is important because stray impedance and dielectric absorption can produce transient leakage after voltage steps; the delay should be long enough for these effects to settle before the current is measured.

Avalanche Photodiode Dark Current Solution

Avalanche photodiode dark-current testing requires a controlled reverse-bias sweep, low-current measurement, and enough settling time after voltage changes to separate device leakage from measurement-path transients. The Keysight B2985C/87C electrometer / high resistance meter combines a voltage source with an ammeter so the reverse-bias voltage can be applied while current is measured synchronously. The Keysight B2985C/87C electrometer / high resistance meter provides 0.01 fA current resolution, current measurement ranges from 2 pA to 20 mA, and voltage sourcing up to 1,000 V, supporting APD evaluation that may require hundreds of volts.

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Block Diagram of Avalanche Photodiode Dark Current Solution

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