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Caratterizzare i transistor bipolari a gate isolato (IGBT) ad alta potenza utilizzando un’unica soluzione integrata in grado di eseguire misurazioni in corrente continua, a impulsi, di capacità e di rottura fino a 1500 A e 10 kV, migliorando l’efficienza delle misurazioni e garantendo al contempo una caratterizzazione accurata dei dispositivi.
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