En savoir plus
segmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505asegmentation:campaign/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg,segmentation:product-category/IC_Semi_Mfg/Semiconductor_Test,segmentation:business-unit/EISG,keysight:product-lines/1h,segmentation:funnel/bofu,keysight:dtx/solutions/facets/industry/semiconductor,keysight:dtx/solutions/facets/development-area/power,keysight:dtx/solutions/facets/workflow-stage/functional-test,keysight:dtx/solutions/facets/design-and-test-product/meter,keysight:models/b1/b1505a
Comment caractériser les transistors bipolaires à grille isolée (IGB) de forte puissance
Caractérisez les transistors bipolaires à grille isolée (IGBT) de forte puissance à l'aide d'une solution intégrée unique permettant d'effectuer des mesures en courant continu, en courant pulsé, de capacité et de claquage jusqu'à 1 500 A et 10 kV, ce qui améliore l'efficacité des mesures tout en garantissant une caractérisation précise des dispositifs.
En savoir plus