How to Measure CMOS Bias Temperature Instability

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Parameter Analyzer
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Parameter Analyzer
+ Parameter Analyzer

Measure Bias Temperature Instability Degradation with Minimal Recovery

Bias temperature instability (BTI) characterization requires applying electrical stress to a metal-oxide-semiconductor field-effect transistor (MOSFET) and periodically measuring changes in device characteristics. Negative bias temperature instability (NBTI) primarily affects PMOS devices under negative gate bias, while positive bias temperature instability (PBTI) can be evaluated using corresponding stress conditions. Measurements typically track threshold voltage or drain current as a function of accumulated stress time.

A stress-measure-stress sequence first establishes the device's current-voltage characteristics, applies the selected stress, and then performs periodic spot or sweep measurements. Measurement intervals must be short because the device can begin recovering when stress is removed, potentially reducing the measured degradation. Direct-current and alternating-current stress can also be applied and compared to characterize device behavior under different operating conditions.

Fast Bias Temperature Instability Test Solution

Bias temperature instability testing requires applying controlled electrical stress while minimizing the time between stress removal and device measurement. The Keysight Semiconductor Device Analyzer supports BTI testing using source/monitor units and its waveform generator/fast measurement unit (WGFMU). The WGFMU combines arbitrary linear waveform generation with ultra-fast current-voltage measurement, enabling both direct-current and alternating-current stress. It supports stress-measure-stress testing with minimal stress interruption and can perform spot and sweep measurements. EasyEXPERT includes BTI application tests as well as dedicated fast BTI tests using current sampling and drain-current-versus-gate-voltage measurement methods.
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See Block Diagram of Fast Bias Temperature Instability Test Solution

See Block Diagram of Fast Bias Temperature Instability Test Solution

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