How to Characterize VCSEL Dynamic Pulse Behavior

+ Modular PXIe Precision SMU

Characterize Dynamic VCSEL Pulse Response

Vertical Cavity Surface Emitting Laser (VCSEL) pulse characterization requires sourcing a controlled current pulse while measuring the device current and voltage throughout the pulse interval. The measurement system must provide sufficient sampling speed to resolve the rising edge, pulse region, and falling edge so changes in device behavior can be observed within a narrow measurement window.

High-speed sampling captures the actual current pulse delivered to the device together with its dynamic voltage response. Measurements can be taken from the transient region through the pulse plateau to evaluate how the electrical characteristics change with time and current level. The captured waveforms provide time-correlated data for analyzing pulse shape and dynamic device behavior during Light-Current-Voltage (LIV) characterization.

Dynamic VCSEL Pulse Characterization Solution

Dynamic VCSEL characterization requires capturing current and voltage measurements throughout a narrow pulse rather than relying only on individual measurement points. The Keysight Precision PXIe Source/Measure Unit (SMU) integrates high-speed measurement at up to 15 MSa/s to capture the actual current pulse output and dynamic VCSEL response from the transient region. The embedded measurement capability records the waveform without requiring an additional instrument for waveform capture. Combined with narrow-current-pulse sourcing down to 10 µs, the solution enables engineers to examine pulse rise, pulse duration, transient response, and changes in device characteristics during the applied current pulse.

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