How to Characterize High-Power Insulated-Gate Bipolar Transistors

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Characterize High-Power Insulated-Gate Bipolar Transistors (IGBTs) with a Single Measurement Platform

Power semiconductor devices used in electric vehicles, renewable energy systems, industrial motor drives, rail transportation, and power conversion applications require comprehensive electrical characterization before production. Engineers must evaluate output characteristics, transfer characteristics, saturation voltage, breakdown voltage, leakage current, and capacitance over wide voltage and current ranges while maintaining measurement accuracy.

Traditional characterization typically requires multiple instruments — including a curve tracer, capacitance meter, high-voltage source, and production tester — to perform these measurements. This increases setup complexity, extends characterization time, and requires switching between multiple test platforms. Engineers also need pulsed measurements to minimize device self-heating and ensure accurate characterization of high-current devices.

Complete High-Power IGBT Characterization Solution

Characterizing high-power insulated-gate bipolar transistors (IGBTs) requires a measurement solution capable of high-current, high-voltage, pulsed, and capacitance testing on a single platform. The Keysight Power Device Analyzer / Curve Tracer combines precision sourcing, parameter measurement, and automated analysis while supporting measurements up to 1500 A and 10 kV. Together with EasyEXPERT Group+ software, interactive curve tracing, oscilloscope waveform visualization, and automatic module selection, the solution helps engineers streamline characterization workflows, improve measurement repeatability, and ensure accurate power semiconductor device evaluation.

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