Execute automated wafer-level low-frequency noise measurements with turnkey measurement drivers and measurement routines for both A-LFNA and WGFMU.


The W7802B PathWave WaferPro A-LFNA Measurement and Programming includes:

  • Seamless integration with the PathWave WaferPro measurement platform
  • Advanced data display and analysis, enabling noise data comparisons and modeling with respect to bias current
  • Automated control of all major wafer probing systems
  • A-LFNA module features DC measurements, 1/f noise, random telegraph noise (RTN) and data analysis
  • Flexible hardware averaging for throughput-accuracy tradeoffs
  • Multiple built-in biasing schemes for flicker noise characterization
  • Measured data compatible with Keysight device modeling software
  • Guided system calibration procedure
  • PEL and Python measurement routine language support
  • Ton and Toff analysis for RTN

The Advanced Low-Frequency Noise Analyzer (A-LFNA) software and user interface is built on top of the PathWave WaferPro measurement platform. Engineers can now manage and automate the full wafer level characterization in a measurement system that is both flexible and expandable. Just as before, those using PathWave WaferPro can program and sequence high-speed DC, capacitance and RF as parameter measurements, all the while automating wafer prober control. Now with the noise measurement module, they can add noise measurements and analysis to the test suite.

The A-LFNA’s built-in measurement routines make DC and noise measurements turnkey. For example, to measure noise on an N-Type MOSFET, the system automatically chooses the source and load impedances that will best expose the intrinsic device noise. The engineer can accept these recommended settings or make changes, and a noise measurement is initiated. The A-LFNA then measures noise power spectral density (1/f noise) and noise in the time domain (RTN). Resulting data is plotted using a “multiplot” data display window. Various window tabs help facilitate common tasks such as evaluating device DC operating point and measuring the slope of the power spectral density curve.

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