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Device Modeling and Characterization
Turnkey solutions for device modeling and characterizing CMOS, RF, and III-V devices
From integrated device manufacturers (IDMs) to top foundries, Keysight provides trusted one-stop solutions that measure, extract, and validate the world’s semiconductor devices. With over two decades of expertise, Keysight's end-to-end device modeling and device characterization solutions, coupled with expert support and state-of-the-art labs, have empowered hundreds of customers to accurately and efficiently model CMOS, RF, and wide-bandgap semiconductor devices.
See What's New in Device Modeling and Characterization.
Device Modeling and Device Characterization Solutions
- Device Modeling IC-CAP is versatile, user-programmable industry standard software for DC, analog, and RF semiconductor device characterization and modeling. Today's most advanced semiconductor foundries and IDMs rely on IC-CAP for modeling silicon CMOS, bipolar, compound gallium arsenide (GaAs), gallium nitride (GaN), and many other device technologies.
- Device Modeling MBP provides complete silicon turnkey device modeling software that integrates SPICE modeling and simulation, model parameter extraction, and model library generation.
- Device Modeling MQA is the industry-standard SPICE model validation software, enabling thorough check-model quality and automatic QA and reporting procedures for both silicon and III-V technologies.
- Device Modeling WaferPro supports on-wafer measurement and programming test software for use with a variety of instruments and wafer probes.
- Advanced Low-Frequency Noise Analyzer (A-LFNA) supports on-wafer measurement and analysis of low-frequency noise including flicker noise and random telegraph noise.
EDA 2025 Launch Event
Watch this short video on the right to see the Keysight EDA innovations that can aid your device modeling and characterization efforts. Then watch the on-demand webinar below.
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Samsung Foundry Adopts Keysight Radio Frequency Device Model Generator
In June, 2023, Keysight announced that Samsung Foundry adopted the new Keysight IC-CAP Model Generator (MG) to accelerate the creation of circuit libraries, a key component of process design kits (PDKs) for Samsung's advanced radio frequency (RF) semiconductor process technologies.
Jongwook Kye, Executive Vice President and Head of Foundry Design Platform Development at Samsung Electronics, said: "Over the past few years, we have been collaborating closely with Keysight EDA to improve the efficiency and accuracy of our RF modeling flow. By adopting the Model Generator in our workflow, our efficiency has improved by at least 30 percent."
How to Extract the ASM-HEMT Model for GaN RF Devices Including Thermal Effects
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are gaining rapid adoption in high-power, high-voltage, and high-frequency applications due to their superior performance such as high saturation velocity, high breakdown voltage, and high sheet carrier density. However, integrating GaN devices into a circuit design requires accurate and robust circuit simulations. The accuracy of simulations depends on the compact model's ability to predict highly non-linear behavior, including thermal and dynamic memory effects.
Download this application note for a comprehensive extraction procedure for the industry-standard ASM-HEMT model for GaN devices, including self-heating.
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