How to Test CMOS Gate Dielectric Reliability

Get Quote
Parameter Analyzer
+ Parameter Analyzer
Parameter Analyzer
+ Parameter Analyzer

Characterize CMOS Gate Dielectric Breakdown

Complementary metal-oxide-semiconductor (CMOS) gate dielectric characterization requires applying controlled voltage or current stress while measuring gate leakage and dielectric breakdown behavior. Time-zero dielectric breakdown (TZDB) applies an increasing gate voltage until breakdown occurs, while time-dependent dielectric breakdown (TDDB) applies constant voltage or current stress and measures the time required for the dielectric to fail.

Voltage ramp (V-Ramp) and current ramp (J-Ramp) measurements provide additional methods for evaluating dielectric behavior. A V-Ramp test increases voltage across the dielectric at a constant linear rate until failure, while a J-Ramp test increases current at logarithmically spaced time points. Measurements can capture parameters including breakdown voltage, time to breakdown, and total charge injected into the dielectric before breakdown.

CMOS Gate Dielectric Reliability Test Solution

Gate dielectric reliability testing requires controlled electrical stress combined with sensitive current and voltage measurements to detect dielectric breakdown. The B1500A Semiconductor Device Analyzer provides configurable source/monitor units for sourcing stress and measuring gate leakage, including high-resolution current measurement for low-leakage devices. EasyEXPERT provides ready-to-use application tests for time-zero dielectric breakdown (TZDB), time-dependent dielectric breakdown (TDDB), voltage ramp (V-Ramp), and current ramp (J-Ramp) measurements. V-Ramp and J-Ramp testing can determine breakdown parameters such as total charge to breakdown and breakdown voltage, while measurement results and current-voltage characteristics can be displayed and stored for subsequent analysis.
Get Quote

See Block Diagram of CMOS Gate Dielectric Reliability Test Solution

Block diagram of how to test CMOS gate dielectric reliability

Explore Products in Our CMOS Gate Dielectric Reliability Test Solution

Related Use Cases

How to Automate SMU Measurements Using Programming

Automate IV measurements and data acquisition using programmable SMU control and synchronized multi-channel workflows.

Learn More

How to Perform Low-Power IC IV Characterization

Perform accurate IV characterization of low-power ICs across sleep and active states using synchronized SMU measurements.

Learn More

How to Perform Low Current Pulse Measurements

Measure ultra-low current and narrow pulse behavior with high accuracy using precision SMU-based IV characterization techniques.

Learn More

contact us logo

Get in Touch with One of Our Experts

Need help finding the right solution for you?

Contact Us