How to Evaluate GaN Current Collapse Effects

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Evaluate GaN Current Collapse

Gallium nitride (GaN) power device characterization requires evaluating transient current collapse and dynamic on-resistance after applying high-voltage OFF-state stress. The measurement system must support high-voltage biasing, rapid switching to the ON state, synchronized voltage and current measurements, and high-speed sampling across both short- and long-duration time intervals to accurately capture transient device behavior.

The measurement process involves applying an OFF-state stress voltage, switching the device into the ON state, and recording drain current and on-resistance immediately after the transition. Accurate characterization depends on synchronized high-voltage and high-current measurements, fast switching between stress and measurement conditions, and capturing recovery behavior over microsecond-to-millisecond time scales under different stress voltages.

GaN Current Collapse Solution

Evaluating gallium nitride (GaN) current collapse requires applying high-voltage OFF-state stress, rapidly switching the device to the ON state, and capturing transient drain current and dynamic on-resistance over both microsecond and millisecond time scales. The Keysight B1505A Power Device Analyzer combines high-voltage and high-current source monitor units with the N1267A High Voltage Source Monitor Unit/High Current Source Monitor Unit Fast Switch to perform these measurements within a single integrated platform. The synchronized measurement architecture enables OFF-state stress up to 3000 V, ON-state pulse currents up to 20 A, switching times as short as 20 μs, and high-speed sampling for observing both immediate current collapse and long-term recovery behavior. Built-in application tests and trace measurement modes simplify dynamic on-resistance and current collapse evaluation for packaged and on-wafer GaN devices while reducing setup complexity and eliminating the need for custom measurement programming.

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