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Description
The HMMC-5636 is a 26.5 GHz packaged GaAs integrated diode limiter that can be used to protect sensitive RF circuits from excess RF power, DC transients and ESD. The circuit contains Planar-Doped-Barrier (PDB) diodes with integrated matching networks and is fabricated with the MB6A integrated diode process. The barrier height of each diode element and the number of diode elements in each “stack” are optimized for low distortion when Pin < 15 dBm, while limiting transmitted power when Pin > 25 dBm. The 1GG5-4208 is available in a 2 mm x 2 mm Quad Flat - No Leads (QFN) SMT package to preserve BW performance and save space on densely populated PC Board designs.
DC specifications
(TA = 25 °C, unless otherwise listed)
Symbol |
Parameters/conditions |
Min. |
Typ. |
Max. |
Units |
Vf1A |
Forward voltage @ 1mA RF In/Out pad to GND pad of adjacent diode stack |
4.8 |
5.3 |
5.9 |
V |
Vf1B |
Forward voltage @ 1mA RF In/Out pad to GND pad of center diode stack |
4.5 |
5 |
5.6 |
V |
RsA |
Series resistance RF In/Out pad to GND pad of adjacent diode stack |
35 |
47.5 |
53 |
Ω |
RsB |
Series resistance RF In/Out pad to GND pad of center diode stack |
20 |
30 |
35 |
Ω |
Typical RF performance
(TA = 25 °C, unless otherwise listed)
Symbol |
Parameters/conditions |
|
Min. |
Typ. |
Max. |
Units |
IL |
Insertion loss |
3 GHz |
|
0.2 |
|
dB |
9 GHz |
|
0.3 |
|
dB |
||
20 GHz |
|
0.6 |
|
dB |
||
RL |
Return loss |
26.5 GHz |
|
> 20 |
|
dB |
P-1 dB |
Incident power @ 1 dB gain compression |
3 GHz |
|
27 |
|
dB |
9 GHz |
|
26.5 |
|
dB |
||
20 GHz |
|
25 |
|
dB |
||
SHI |
Second harmonic intercept |
3 GHz |
|
> 100 |
|
dBm |
9 GHz |
|
> 100 |
|
dBm |
||
THI |
Third harmonic intercept |
3 GHz |
|
50 |
|
dBm |
9 GHz |
|
44 |
|
dBm |
||
TOI |
Third order intercept |
3 GHz |
|
49 |
|
dBm |
9 GHz |
|
45 |
|
dBm |
||
20 GHz |
|
43 |
|
dBm |
||
Pburnout |
Continuous RF burnout |
3 GHz |
|
> 10 |
|
W |
15 GHz |
|
> 5 |
|
W |
Applications
The HMMC-5636 can be used as an RF limiter, a Reverse Power Protection (RPP) device, and as an ESD and DC transient protector. As a limiter, the incident power at 1 dB gain compression (P–1dB) is 26.5 dBm at 9 GHz and drops to 25 dBm at 20 GHz. As an ESD protection device, the TC626 can protect ESD sensitive components, the degree of protection depending on the protected components characteristics. ESD damage level for the TC626 by itself is greater than 6 kV (measured with an IEC801–2, 150 pF, 330 ohm contact ESD generator).
Assembly Techniques
Diodes are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly.
Keysight application note #54, “GaAs MMIC ESD, Die Attach and Bonding Guidelines” provides basic information on these subjects.
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