The PSP model is a compact MOSFET model intended for digital, analogue, and RF-design, which is jointly developed by NXP Semiconductors Research (formerly part of Philips) and Arizona State University (formerly at The Pennsylvania State University). The roots of PSP lie in both MOS Model 11 (developed by Philips) and SP (developed by Penn State University). PSP is a surface-potential based MOS Model, containing all relevant physical effects to model present-day and upcoming deep-submicron bulk CMOS technologies. The source/drain junction model, c.q. the JUNCAP2 model, is fully integrated in PSP. PSP accounts for the following physical effects:

  • Non-uniform lateral doping
  • Non-uniform vertical doping
  • Field-dependent mobility
  • Velocity saturation
  • Conductance effects
  • Series-resistance
  • Short-channel effects
  • Narrow-width effects
  • Gate poly-depletion
  • Quantum-mechanical corrections
  • Overlap capacitances (¦×-based)
  • Impact ionization current
  • Gate leakage current
  • Gate-induced drain/source leakage (GIDL, GISL)
  • Junction diode IV and CV (forward and reverse)
  • Diode reverse breakdown
  • Noise (1/f, thermal, induced gate and shot noise)
  • Non-quasi-static effects
  • Gate and bulk resistances
  • STI stress effect

The PSP model has a hierarchical structure which means that there is a strict separation of the geometry scaling in the global model and the model equations in the local model. Consequently, PSP can be used at either one of two levels.

Global parameter set : To model a geometry range with instance parameters
Local parameter set: To model one specific geometry