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Charakterisierung der dielektrischen Zuverlässigkeit von CMOS-Gates mittels Messungen des dielektrischen Durchbruchs bei Nullzeit (TZDB), des zeitabhängigen dielektrischen Durchbruchs (TZDB), der V-Rampe und der J-Rampe zur Bewertung des dielektrischen Durchbruchverhaltens.
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