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W7023E PathWave IC-CAP BSIMSOI Model Extraction Package
Adds measurement and extraction for BSIMSOI CMOS Model for DC and RF applications
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The W7023E PathWave IC-CAP BSIMSOI Model Extraction Package provides measurement and extraction procedures for BSIMSOI industry-standard model for Silicon-On-Substrate (SOI) MOSFET devices.
Highlights
The W7023E PathWave IC-CAP BSIMSOI Model Extraction Package includes:
- DC, CV, and RF extraction for BSIMSOI v4.6.1, including high-frequency effects
- Robust, direct extraction procedures find the best initial values for optimizers, thereby removing the need for excessive optimization and tuning steps
- Flexible, customizable extraction flow
- Windows-style data visualization, optimization and tuning
- Shared user interface environment with other extraction CMOS extraction products
- Target and Corner Modeling
- Binning model support
BSIMSOI, an industry-standard model based on the BSIM3 model for bulk devices. It shares the same basic equations with BSIM3 so that the physical nature and smoothness of BSIM3v3 are retained. BSIM-SOI was selected by Si2 Compact Model Coalition (CMC) as the standard SOI MOSFET model in December 2001.
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