3D Patterned LED Simulation
Application Notes
This application note demonstrates the simulation of a 3D Gallium Nitride (GaN)-based light-emitting diode (LED) structure using RSoft’s FullWAVE and LED Utility. The simulation aims to evaluate the far-field emission and extraction efficiency of this patterned LED compared to a flat LED.
FullWAVE, based on the finite-difference time-domain (FDTD) method, is used to perform both continuous-wave and pulsed simulations. Far-field profiles and extraction efficiency spectra are computed for structures with and without the PhC. The results show enhanced directional emission and improved extraction efficiency for the patterned LED across a range of wavelengths.
This example highlights how FullWAVE and the LED Utility can model complex 3D photonic structures and accurately capture the impact of surface patterning on LED performance.