A Complete CMOS Reliability Test Solution
애플리케이션 노트
As CMOS device feature sizes continuously scale down there are accompanying increases in both electric field strength and current density, which in-turn act to reduce device lifetimes. These factors make the testing of CMOS device reliability concerns such as gate and interlayer dielectric degradation, hot carrier effects, bias temperature instability and interconnect opens and shorts crucial to guarantee integrated circuit (IC) lifetimes.