Toggle Menu
애플리케이션 노트
Driven by the twin requirements of improved energy efficiency and lower carbon emissions, the need for accurate power device characterization continues to take on increased importance. Device structures and fabrication processes are being improved, and new wide band gap (WBG) semiconductor materials, such as silicon carbide (SiC), gallium nitride (GaN), and gallium oxide (Ga2O3) are being studied to support higher voltages and provide a lower turn-on resistance. Meeting these needs requires a measurement instrument with the ability to handle both high voltage and high current.
×
판매 문의 부탁드립니다.
*Indicates required field
감사합니다!
A sales representative will contact you soon.
