Northrop Grumman is a leading global security company providing innovative systems, products and solutions in unmanned systems, cyber, C4ISR, and logistics and modernization to government and commercial customers worldwide.

Microelectronics Products and Services (MPS) provides commercial access to Northrop Grumman’s state-of-the-art Advanced Semiconductor Foundry. The foundry has a history of facilitating technological advancements that have allowed Northrop Grumman to redefine the commercial telecommunications industry.

  • Their GaAs HBT process sparked the cell phone power amplifier revolution of the late 1990s.
  • Their GaAs HEMT chipset (under the Velocium Products label) enabled the 23/26 and 38 GHz point-to-point wireless telecom market (2001).
  • They provided the first GaAs chipsets for the V-band (2001), E-band (2004), and W-band (2002) frequency ranges.

MPS continues to lead the way forward by leveraging its expertise in GaAs, InP, and GaN technologies to provide discriminating MMICs in wireless E-band telecom, W-band radar, and satcom high power amplifiers.

The ADS PDK support matrix is given below:

NGC Process Design Kits
Process NameProcess DescriptionLatest ADS Version SupportedFront/Back PDKEM SubstrateMMIC ToolbarDRCLVSElectro-Thermal
GaAs P3D4mil GaAs 0.1 µm Low Noise2025
F/BYYYYN
GaAs P3K, 2mil2mil GaAs 0.1 µm Power2025
F/BYYYYN
GaAs P3K, 4mil4mil GaAs 0.1 µm Power2025
F/BYYYYN
GaAs P3H, 2mil2mil GaAs 0.15 µm Power2025
F/BYYYYN
GaAs P3H, 4mil4mil GaAs 0.15 µm Power2025
F/BYYYYN
InP TF2InP TF2 Digital
2025
FNNNNN
InP TF2PInP TF2P Mixed Signal
2025
FNNNNN
InP TF4 R442InP TF4 Digital2025
FNNNNN
InP TF4 R445
InP TF4 Mixed Signal
2025
FNNNNN
InP TF5InP TF5 Mixed Signal2025F/BYYYYN
InP N60InP 0.1 µm Low Noise2025
F/BYYYYN
GaN09GaN 90 nm Power & Low Noise2025F/BYYYYN
GaN15 PWR
GaN 0.15 µm Power2025
F/BYYYYN
GaN20 PWR
GaN 0.2 µm Power2025
F/BYYYYN

Please contact your foundry partner directly for downloading the latest ADS PDKs.

For more information, refer to Northrop Grumman.