How to Perform On-Wafer Device Characterization at Sub-THz Frequencies

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Expert Vector Network Analyzer
+ Expert Vector Network Analyzer
Expert Vector Network Analyzer
+ Expert Vector Network Analyzer

Sub-THz Device Characterization

On-wafer characterization at sub-terahertz frequencies requires broadband measurements that isolate the intrinsic electrical behavior of semiconductor devices from the influence of probes, interconnects, and measurement fixtures. The measurement configuration includes a vector network analyzer, broadband frequency extenders, a test set controller, precision calibration substrates, and ground-signal-ground wafer probes operating across wide frequency ranges. Engineers perform calibrated broadband scattering parameter measurements directly on semiconductor wafers to evaluate active and passive devices before packaging. Typical devices include transimpedance amplifiers, electro-optical drivers, monolithic microwave integrated circuits, differential amplifiers, and emerging sub-terahertz components for optical communications, sensing, and artificial intelligence hardware.

The acquired measurement data is used to validate circuit performance, extract compact device models, and compare measured electrical behavior against electromagnetic and circuit simulations. Broadband measurements provide insight into gain, isolation, impedance matching, bandwidth, stability, and differential operation while maintaining a consistent calibration across the entire measurement range. By performing characterization before packaging, engineers can identify process variations, optimize device layouts, verify design assumptions, and accelerate design iterations without the additional uncertainty introduced by packages or external interconnect structures.

Sub-THz Device Characterization Solution

Accurate on-wafer device characterization requires broadband measurements that preserve the intrinsic electrical performance of semiconductor devices while minimizing the influence of measurement interfaces and probe transitions. The workflow begins with on-wafer calibration using precision calibration substrates, followed by synchronized operation of the vector network analyzer, broadband frequency extenders, and test set controller to acquire continuous scattering parameter measurements across the operating frequency range. Engineers evaluate gain, insertion loss, return loss, isolation, impedance matching, differential performance, and bandwidth while comparing measured results with electromagnetic simulations and circuit models. The solution supports characterization of active devices such as transimpedance amplifiers, electro-optical drivers, monolithic microwave integrated circuits, and differential amplifiers, as well as passive semiconductor structures. Continuous measurements to 250 GHz improve repeatability, calibration consistency, and measurement confidence throughout research, process development, and design validation workflows.
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How to Perform On-Wafer Device Characterization at Sub-THz Frequencies

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