The W8551 IC-CAP HiSIM Model Extraction Package provides complete measurement and extraction procedures for DC, CV, and RF model parameters. The intuitive, Windows-style user interface enables engineers to quickly produce an accurate model.
HiSIM2, an industry-standard model advanced surface potential model, was developed by Hiroshima University in Japan. Earlier compact models, such as the BSIM4, were primarily developed for digital circuits and have limitations when used for analog and RF applications at smaller technology nodes. The HiSIM2 model calculates the device’s surface potential, enabling a more accurate description of the deep sub-micron physical phenomena and resulting in a more accurate description of the internal currents and charges.
DC, CV, and RF extraction for HiSIM v2.5.1 with methods for modeling high-frequency effects for MOS/CMOS
Robust, direct extraction procedures used to find the best initial values for optimizers thereby removing the need for excessive optimization and tuning steps
Flexible, customizable extraction flow
Windows-style data visualization, optimization, and tuning
Shared user interface environment with extraction package products available for other industry-standard models including BSIM3, BSIM4, BSIMSOI4, PSP, and HiSIM_HV. The common measurement module enables you to use measurements to extract any of these models