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W7024E PathWave IC-CAP BSIM3 Model Extraction Package
Adds measurement and extraction for BSIM3 CMOS Model for DC and RF applications
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The W7024E PathWave IC-CAP BSIM3 Model Extraction Package provides measurement and extraction procedures for the BSIM3 industry-standard model for MOSFET devices.
Highlights
The W7024E PathWave IC-CAP BSIM3 Model Extraction Package includes:
- DC, CV, and RF extraction for BSIM3v3.3, including high-frequency effects
- Robust, direct extraction procedures find the best initial values for optimizers, thereby removing the need for excessive optimization and tuning steps
- Flexible, customizable extraction flow
- Windows-style data visualization, optimization and tuning
- Shared user interface environment with other extraction CMOS extraction products
- Target and Corner Modeling
- Binning model support
BSIM3 is a physics-based, accurate, scalable, robust, and predictive MOSFET SPICE model for circuit simulation and CMOS technology development. The BSIM Research Group in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley, developed the model in 1996. BSIM3v3 has been widely used by most semiconductor and IC design companies worldwide for device modeling and CMOS IC design.
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