How to Characterize SiC and GaN Switching

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Photovoltaic Array Simulators
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Photovoltaic Array Simulators
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Analyze Fast Switching Transitions Accurately

Wide bandgap devices such as SiC and GaN enable significantly faster switching speeds compared to traditional silicon devices, making them well-suited for high-efficiency power conversion systems. However, these fast transitions introduce measurement challenges, including high dv/dt and di/dt, voltage overshoot, and ringing caused by parasitic inductance in the test setup. Accurately capturing these effects is essential for understanding device behavior during switching events and ensuring reliable system performance.

Double pulse testing is a widely used method for evaluating the dynamic switching characteristics of power devices under controlled conditions. By applying two consecutive pulses, engineers can isolate turn-on and turn-off behavior while measuring voltage and current waveforms simultaneously. This enables detailed analysis of switching transitions, including timing, energy loss during switching, and transient effects. The insights gained from these measurements support optimization of gate drive conditions, reduction of switching losses, and improved overall efficiency in power electronics designs.

SiC and GaN Switching Characterization Solution

This solution enables precise dynamic characterization of SiC and GaN devices using double pulse testing techniques described in the application note. By capturing synchronized voltage and current waveforms during switching events, engineers can analyze turn-on and turn-off behavior, quantify switching losses, and observe transient effects such as overshoot and ringing. The approach supports accurate evaluation of device performance under realistic operating conditions, helping engineers optimize switching parameters, improve efficiency, and validate power device designs for high-performance applications.
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