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HMMC-5629 DC-26.5 GHz HBT Limiting Amplifier

HMMC-5629 DC-26.5 GHz HBT Limiting Amplifier

Data Sheets

Introduction

 

The HMMC-5629 is a DC – 26.5 GHz, 20 dB gain differential limiting amplifier designed to be used as a general purpose gain block for a variety of applications. The device consists of three differential pair stages and provides 75 Ω input/output port matches to reduce power dissipation. Furthermore, this amplifier is fabricated using HFTC’s HB2B InP HBT process which provides excellent process uniformity, reliability, and 1/f noise performance. The device requires a single negative supply voltage and dissipates less than 0.165 Watts from a -3.3 V supply.

 

Absolute Maximum Ratings 1

 

Symbol

Parameters/Conditions

Min.

Max.

Units

Vee

Collector Pad Voltage

-3.5

 

Volts

Iout

Maximum Collector Current

 

60

mA

Pin

CW Input Power

 

5

dBm

Tj

Maximum Junction Temperature 2

 

150

°C

TA 3

Ambient Temperature

-55

75

°C

Tstg

Storage Temperature

-65

150

°C

Tmax 4

Maximum Assembly Temperature

 

260

°C

 

DC Specifications/Physical Properties 1

 

Symbol

Parameters/Conditions

Min.

Typ.

Max.

Units

Vee

Supply Voltage

-3.5

-3.3

-3.0

V

Iee

Supply Current

40

50

60

mA

Rcm

Resistance from Vcm to either output

 

5000

 

Ω

Iadj

Reference Current

3

4

5

mA

Vadj

Voltage on Iadj pin

-0.5

0

0.5

V

Vtd

Temperature Diode Voltage

-0.8

 

0.8

V

 

Frequency-Domain RF Specifications 1

 

Symbol

Parameters/Conditions

DC - 20 GHz

 

DC - 20-26.5 GHz

Units

 

 

 

 

 

 

 

 

Min.

Typ.

Max.

Min.

Typ.

Max.

 

S21

Small Signal Gain

14

20

25

11

17

23

dB

RLin

Input Return Loss

5

10

 

5

10

 

dB

RLout

Output Return Loss

5

10

 

5

10

 

dB

ISO

Reverse Isolation

 

-65

-50

 

-60

-40

dB

Pout

Output Power with Pin = -15 dBm

 

-2

 

 

-3.5

 

dBm

NF

Noise Figure

 

15

 

 

15

 

dB

 

Biasing

 

In nominal operation the HMMC-5629 is biased with a single negative 3.3 V supply applied to the Vee pin and the Iadj pin is grounded.

Additionally, if a precise output voltage is required, a precision current source can be applied to the Iadj pin. This reference current is nominally set to 4 mA and must not be less than 3 mA nor greater than 5 mA. During power-up, first set Vee to -3.3 V then set the current into the Iadj pin to 4 mA. When powering down, set Iadj to 0 mA or disconnect then turn down Vee.

The common mode output voltage can be monitored at the Vcm pin and two anti-polar temperature diodes connected between the TD pin and ground can be used to stabilize the output voltage over temperature.

 

Assembly Techniques

 

The HMMC-5629 is fabricated using an InP-based HBT semiconductor material structure which limits the maximum assembly temperature to 150°C. Due to the fact AuSn solder dieattach temperatures exceed this limit, only epoxy-based die-attach materials and processes (such as 84-1LMI) should be employed during HMMC-5629 assembly.

GaAs and InP MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly.

Keysight application note #54, “GaAs MMIC ESD, Die Attach, and Bonding Guidelines” provides basic information on the subjects.

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